Very Low Electron Density in Undoped Enhancement-Mode Si/SiGe Two- Dimensional Electron Gases with Thin SiGe Cap Layers
نویسندگان
چکیده
We report the lowest electron density (4.9×10 cm and 1.1×10 cm) and high mobility (~400,000 cm/Vs and ~200,000 cm/Vs) of undoped enhancement-mode Si/SiGe two-dimensional electron gases comparing to samples previously reported with similar thin SiGe cap thickness (55nm and 27nm). The dominant scattering mechanism over a wide range of two-dimensional electron density in both samples is the scattering from remote charges at oxide/silicon interface. In addition, a clear metal-insulator transition is observed in the sample with a 27-nm SiGe cap.
منابع مشابه
High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility
We have demonstrated high mobility MOS transistors on high quality epitaxial SiGe films selectively grown on Si (100) substrates. The hole mobility enhancement afforded intrinsically by the SiGe channel (60%) is further increased by an optimized Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. Surface orientation, channel direction, and uniaxial strain technolog...
متن کاملCompliant effect of low-temperature Si buffer for SiGe growth
Relaxed SiGe attracted much interest due to the applications for strained Si/SiGe high electron mobility transistor, metal-oxide-semiconductor field-effect transistor, heterojunction bipolar transistor, and other devices. High-quality relaxed SiGe templates, especially those with a low threading dislocation density and smooth surface, are critical for device performance. In this work, SiGe film...
متن کاملSb surfactant - mediated SiGe graded layers for Ge photodiodes integrated on
High-quality SiGe and Ge thin films were grown on Si substrates by molecular-beam epitaxy using a technique that combines SiGe composition grading and Sb surfactant mediation. Both transmission electron microscopy and Schimmel defect etch measurements show that the Sb surfactant-mediated SiGe graded buffer layers have lower dislocation densities than those without an Sb surfactant. A systematic...
متن کاملSymrnetrlc Si/Si 1 -,Ge, two-dimensional hole gases grown by rapid thermal chemical vapor deposition
Single and symmetric double p-type modulation-doped structures have been fabricated in Si/ SiGe for the first time by rapid-thermal chemical-vapor deposition. Temperaturedependent electrical-measurements and high-field magnetotransport measurements demonstrate the presence of a well-confined two-dimensional hole gas in these samples. Nominallysymmetric normal and inverted structures differ in c...
متن کاملCarbon incorporation for strain compensation during solid phase epitaxial recrystallization of SiGe on Si at 500–600 °C
Transmission electron microscopy has been combined with time-resolved reflectivity and ion channeling to study the effects of carbon doping on solid-phase epitaxial regrowth �SPER� of strained 2000 Å, Si0.88Ge0.12Si alloy layers grown by molecular-beam epitaxy �MBE�. Relative to the undoped layers, carbon incorporation in the MBE grown SiGe layers prior to regrowth at moderate temperatures �500...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2013